DDR4

相比DDR3,DDR4通过提高核心频率和Bank Group数量,大幅提高了性能,支持更大容量。同时做到供电电压更低,因此功耗更低。此外,DDR4新增了CRC(Cyclic Redundancy Check)、CA parity、DBI(Data Bus Inversion)、温度补偿刷新TCSE/TCAR等功能,不仅降低了DDR4在使用中的功耗,也增强了信号的完整性、改善了数据传输及存储的可靠性。

Part No. Den. Org. Voltage Package Dim.(mm) Status Speed Temperature Model
SCB12Q8G800BF

8Gb

1024Mbx8

1.2V

FBGA96

7.5x13

MP

3200/2666

C I

SCB12Q8G160BF

8Gb

512Mbx16

1.2V

FBGA96

7.5x13

MP

3200/2666

C I

SCB12Q4G160BF

4Gb

256Mbx16

1.2V

FBGA96

7.5x13

MP

3200/2666

C I

SCB12Q4G160AF

4Gb

256Mbx16

1.2V

TFBGA96

7.5x13.5

MP

2666

I

IBIS

Notes

  • Temperature Specification:

    C = Commercial Temperature chip (DDR2, DDR3, DDR4: 0°C ~ +95°C; LPDDR2: 0°C ~ +85°C;SDR, DDR: 0°C ~ +70°C)

    I = Industrial Temperature chip (DDR2, DDR3: -40°C ~ +95°C; SDR, DDR, LPDDR2, LPDDR4: -40°C ~ +85°C)

    A1 = Automotive grade 1(-40°C ~ +125°C)

    A2 = Automotive grade 2(-40°C ~ +105°C)

    A25 = Automotive grade 2(-40°C ~ +115°C)

    A3 = Automotive grade 3(-40°C ~ +95°C);LPDDR4(-40°C ~ +85°C)